窒化物単結晶のアニール処理方法

摘要

PROBLEM TO BE SOLVED: To provide a method for easily producing a low-resistance nitride single crystal which is high in mobility even when crystal-growth is performed by an ammonothermal method.

SOLUTION: A crystal-grown nitride single crystal in the presence of a solvent containing nitrogen in a supercritical state and/or subcritical state is subjected to annealing treatment at 750°C or higher for 5.5 hours or longer.

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