发明名称 Method to fabricate a substrate including a material disposed on the edge of one or more non through hole formed in the substrate
摘要 Method for producing a substrate comprising at least one getter material arranged on the walls of at least one blind hole, comprising at least the steps of: etching the blind hole through a first face of the substrate,depositing a continuous layer of getter material on the whole of the first face of the substrate and at least on the side walls of the blind hole,etching part of the layer of getter material located on the first face of the substrate such that said first face of the substrate is no longer covered by the getter material,in which the step of etching part of the layer of getter material comprises the implementation of an etching by ion beam machining, or chemical-mechanical planarization or polishing.
申请公布号 US9277656(B2) 申请公布日期 2016.03.01
申请号 US201414551977 申请日期 2014.11.24
申请人 Comissariat a l'énergie atomique et aux énergies alternatives 发明人 Giroud Sophie;Ferrandon Christine
分类号 H05K3/46;C23F1/04;H01L23/10;H01L23/26;H01L23/31 主分类号 H05K3/46
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. Method for producing a substrate comprising at least one getter material arranged on the walls of at least one blind hole, comprising at least: etching the at least one blind hole through a first face of the substrate, depositing a layer of getter material in a continuous manner on the whole of the first face of the substrate and at least on the side walls of the at least one blind hole, etching part of the layer of getter material located on the first face of the substrate such that said first face of the substrate is no longer covered by the getter material, in which the etching part of the layer of getter material comprises the implementation of an etching by ion beam machining, or chemical-mechanical planarization or polishing.
地址 Paris FR