Heterogeneous semiconductor photonic integrated circuit with multiple offset heights

摘要

Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance. Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).

主权项

1. A method comprising:
depositing a cladding layer into a region of a silicon-on-insulator (SOI) substrate, the SOI substrate including a silicon layer having a plurality of silicon waveguides, each silicon waveguide having:
a first level; anda second level transitioning below the region the cladding layer is deposited into to avoid optical interaction near the region; bonding a non-silicon material to the SOI substrate, wherein each of the plurality of silicon waveguides are separated from the non-silicon material by a plurality of different separation distances formed at least from the first level and the second level of each waveguide; and removing at least a portion of the non-silicon material subsequent to bonding the non-silicon material to the SOI substrate.