Semiconductor device, method for manufacturing the same, and electronic device

摘要

Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

主权项

1. A semiconductor device comprising:
a first semiconductor chip having an electronic circuit section formed at least on one surface of the first semiconductor chip, and having a first connecting section formed on a same surface as the surface of formation of said electronic circuit section; a second semiconductor chip having a second connecting section formed on one surface of the second semiconductor chip, the second semiconductor chip being mounted on said first semiconductor chip with said first connecting section and said second connecting section connected to each other by a bump; a dam formed so as to fill a gap between said first semiconductor chip and said second semiconductor chip on at least a part of an outer edge of said second semiconductor chip, the part of the outer edge of said second semiconductor chip being on a side of a region of formation of said electronic circuit section; and an underfill resin layer provided in the gap between said first semiconductor chip and said second semiconductor chip such that a protrusion of the underfill resin layer from the outer edge of said second semiconductor chip to a side of said electronic circuit section is prevented by said dam, wherein said underfill resin layer includes a protrusion from at least a part of an outer edge of said second semiconductor chip where said dam is not formed.