主权项 |
1. A plasma processing apparatus comprising:
a processing chamber that performs a plasma process therein; a first electrode installed within the processing chamber and having therein a heating member; a second electrode installed within the processing chamber so as to face the first electrode; a first high frequency power supply electrically connected with the first electrode; a second high frequency power supply electrically connected with the first electrode or the second electrode; and a filter that is installed on a power feed line for electrically connecting the heating member with a heater power supply and simultaneously attenuates or blocks a first high frequency noise and a second high frequency noise entering the power feed line via the heating member, wherein the filter includes: a coil that forms a part of the power feed line, the coil being a central conductor; a capacitor connected between an output terminal of the heater power supply of the coil and a conductive member of a ground potential; and a tube-shaped outer conductor that accommodates or surrounds the coil without accommodating or surrounding the capacitor and forms a distributed constant line having a constant characteristic impedance in pair with the coil, further wherein parallel resonance occurs in the distributed constant line at regular multiple resonance frequencies, and said regular multiple resonance frequencies are determined by a winding length of the coil, the winding length of the coil is set such that two of the multiple resonance frequencies are equal to or approximate to a first frequency of the first high frequency noise and a second frequency of the second high frequency noise respectively, so that the distributed constant line provides impedances obtained at local peaks of an impedance characteristic curve, which increase due to parallel resonance for the first and second high frequency noises, and the second frequency is different from the first frequency. |