| 发明名称 | Processes for in-situ annealing of TMR sensors | ||
| 摘要 | A method in one embodiment includes applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintaining the current at the level for an amount of time sufficient to anneal the tunneling magnetoresistive (TMR) sensor. Additional systems and methods are also presented. | ||
| 申请公布号 | US9275796(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201213629450 | 申请日期 | 2012.09.27 |
| 申请人 | International Business Machines Corporation | 发明人 | Iben Icko E. T. |
| 分类号 | H01L43/12;H01F41/14;H01F41/30;G11B5/39;B82Y25/00;B82Y40/00;G01R33/09;G11B5/31;H01F10/32;G11B5/40 | 主分类号 | H01L43/12 |
| 代理机构 | Zilka-Kotab, PC | 代理人 | Zilka-Kotab, PC |
| 主权项 | 1. A method, comprising: applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintaining the current at the level for an amount of time sufficient to anneal the tunneling magnetoresistive (TMR) sensor, wherein no external magnetic field is applied to the sensor during application of the current. | ||
| 地址 | Armonk NY US | ||