Ｉｎ合金スパッタリングターゲット、その製造方法及びＩｎ合金膜

摘要

An In alloy sputtering target has a chemical composition containing 0.5 to 25 at.% of Al, with the remainder made up by In and unavoidable impurities. The In alloy sputtering target may additionally contain 0.3 to 25 at.% of Cu. An In alloy film has a chemical composition containing 0.3 to 25 at.% of Al, with the remainder made up by In and unavoidable impurities. The In alloy film may additionally contain 0.3 to 25 at.% of Cu.