| 主权项 |
1. A vapor deposition apparatus for depositing a film of a III-V compound semiconductor on a substrate, comprising:
a deposition chamber for depositing said III-V compound semiconductor film on said substrate; a plurality of source gas tubes for supplying a source gas in said deposition chamber, said source gas containing a gas containing a group-III element and a reactive gas containing group-V element, which is capable of being reacted with said gas containing group-III element to deposit said III-V compound semiconductor film; a transfer unit for transferring said substrate in an interior of said deposition chamber; and a supply tube for supplying a gas containing a group-V element to the interior of said deposition chamber, wherein said plurality of source gas supply tubes include a hydride deposition gas tube for supplying a gas for hydride vapor phase deposition which supplies a first source gas in said deposition chamber, said first source gas containing a gas containing a halogen and a group-III element and a reactive gas containing a group-V element, and an organometallic deposition tube for supplying a gas for metal organic chemical vapor deposition which supplies a second source gas in said deposition chamber, said second source gas containing a gas containing an organic metal containing a group-III element and a reactive gas containing a group-V element, wherein said transfer unit comprises a susceptor for supporting said substrate and a driving unit for providing a rotary drive of said susceptor, wherein said susceptor is configured to be driven by said driving unit so that said substrate supported by said susceptor travels along a circle, center of which is coincide with a rotating axis of said susceptor, discharge ports of said plurality of source gas tubes being located over said circle in plan view viewed from the direction along said rotation axis, wherein said transfer unit is configured that said substrate travels along said circle so that said substrate is alternately situated in a facing-state where said substrate is located in a deposition region that faces said discharge port of said source gas tube through which said first source gas or said second source gas is exhausted and in an other-state where said substrate is located in other region except said deposition region, while said first source gas is supplied from the discharge port of the hydride deposition gas tube for supplying the gas for hydride vapor phase deposition or while said second source gas is supplied from the discharge port of said organometallic deposition tube for supplying the gas for metal organic chemical vapor deposition, wherein a tip section of said supply tube extends in parallel with said rotation axis of said susceptor and is disposed in the inside of said circle in plan view viewed from the direction along said rotation axis, and wherein said gas containing said group-V element is radially exhausted from the tip section of said supply tube toward said substrate located in other region except said deposition region and a region within said deposition chamber except said deposition region. |
