Resin-encapsulated semiconductor device and method of manufacturing the same

摘要

A resin-encapsulated semiconductor device includes a semiconductor element mounted on a die pad portion, a plurality of lead portions arranged so that leading end portions thereof are opposed to the die pad portion, and thin metal wires connecting electrodes of the semiconductor element to the lead portions. An encapsulation resin encapsulates the die pad portion, semiconductor element and lead portions in such a manner that a bottom surface part of the die pad portion and a lead bottom surface part, lead outer surface part, and lead upper end part of the lead portions are exposed from the encapsulation resin. A plating layer is formed on the lead bottom surface parts and the lead upper end parts. The encapsulation resin has cutouts on a side surface thereof vertically above the portions of the lead upper end parts on which the plating layer is formed.

主权项

1. A resin-encapsulated semiconductor device, comprising:
a die pad portion; a semiconductor element mounted on the die pad portion; a plurality of lead portions arranged so as to be opposed to at least two sides of the die pad portion; thin metal wires connecting the plurality of lead portions to a plurality of electrodes provided on a surface of the semiconductor element; and an encapsulation resin for encapsulating the die pad portion, the semiconductor element, and the plurality of lead portions in a manner that the plurality of lead portions are partially exposed, wherein the plurality of lead portions each comprise a lead bottom surface part that is a bottom surface exposed from the encapsulation resin, a lead outer surface part that is a leading end, and a lead upper end part that is a part of an upper surface, wherein the lead bottom surface part is flush with a bottom surface of the encapsulation resin, wherein the lead bottom surface part and the lead upper end part each have a plating layer formed thereon at a region of the lead portion that has a uniform thickness, and wherein the encapsulation resin has a cutout on a side surface thereof vertically above a portion of the lead upper end part on which the plating layer is formed.