PLASMA TREATING APPARATUS AND SUBSTRATE TREATING APPARATUS

摘要

The present invention relates to a plasma treating apparatus and a substrate treating apparatus. According to an embodiment of the present invention, the plasma treating apparatus comprises: a process chamber forming an internal space; a microwave applying unit which excites gas in the internal space by plasma; a first nozzle formed on an inner wall of the chamber to spray first process gas to an upper portion of the internal space; and a second nozzle formed on the inner wall of the chamber to spray second process gas to a lower portion of the internal space. Therefore, the present invention efficiently treats a substrate.