NANO STURUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nanostructure semiconductor light emitting device of the present invention, comprises: a base layer having first and second regions and formed of a first conductive semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductive semiconductor material, and an active layer and a second conductive semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein tip portions of the plurality of light emitting nanostructures disposed in a first region have parts in which the contact electrodes are not arranged, and tip portions of the plurality of light emitting nanostructures disposed in a second region are covered with the contact electrode, thereby preventing an effect with respect to a leakage current generated from the active layer positioned on the tip portions of the light emitting nanostructures and an increase in operating voltages of the light emitting nanostructures.