| 发明名称 |
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM |
| 摘要 |
There is provided a substrate processing method, comprising: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed. |
| 申请公布号 |
SG11201600523P(A) |
申请公布日期 |
2016.02.26 |
| 申请号 |
SG11201600523P |
申请日期 |
2014.07.28 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC.;AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. |
发明人 |
OKUNO MASAHISA;KAKUDA TORU;TATENO HIDETO;JODA TAKUYA;KUROKAWA MASAMICHI;MASAHISA OKUNO;TORU KAKUDA;HIDETO TATENO;TAKUYA JODA;MASAMICHI KUROKAWA |
| 分类号 |
H01L21/312;H01L21/02;H01L21/304;H01L21/31 |
主分类号 |
H01L21/312 |
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