| 摘要 |
Disclosed is an RF integrated circuit with low cost, high efficiency and superior reliability. The RF integrated circuit according to the present invention includes a semiconductor substrate; an insulation layer structure which is formed on the semiconductor substrate, and comprises an anodizing aluminum oxide layer with a plurality of holes and an oxide layer formed on the anodizing aluminum oxide layer; and a passive radio frequency (RF) element which comprises a surface mounting resistance, a capacitor, and an inductance formed on the insulation layer structure. |
