| 摘要 |
A METHOD FOR CLEANING THE SURFACE OF A SILICON SUBSTRATE, COVERED BY A LAYER OF SILICON OXIDE INCLUDES: A) EXPOSING THE SURFACE FOR 60 TO 900 SECONDS TO A RADIOFREQUENCY PLASMA, GENERATED FROM A FLUORINATED GAS, TO STRIP THE SILICON OXIDE LAYER AND INDUCE THE ADSORPTION OF FLUORINATED ELEMENTS ON THE SUBSTRATE SURFACE, THE POWER DENSITY GENERATED USING THE PLASMA BEING 10 mW/cm² TO 350 mW/cm², THE FLUORINATED GAS PRESSURE BEING 10 mTORRS TO 200 mTORRS, AND THE SUBSTRATE TEMPERATURE BEING LOWER THAN OR EQUAL TO 300° C; AND B) EXPOSING THE SURFACE INCLUDING THE FLUORINATED ELEMENTS FOR 5 TO 120 SECONDS TO A HYDROGEN RADIOFREQUENCY PLASMA, TO REMOVE THE FLUORINATED ELEMENTS FROM THE SUBSTRATE SURFACE, THE POWER DENSITY GENERATED USING THE PLASMA BEING 10 mW/cm² TO 350 mW/cm², THE HYDROGEN PRESSURE BEING 10 mTORRS TO 1 TORR, AND THE SUBSTRATE TEMPERATURE BEING LOWER THAN OR EQUAL TO 300° C. |
