发明名称 |
SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR STACKED CHIP APPLICATIONS |
摘要 |
An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels. |
申请公布号 |
HK1208286(A1) |
申请公布日期 |
2016.02.26 |
申请号 |
HK20150108850 |
申请日期 |
2015.09.10 |
申请人 |
OMNIVISION TECHNOLOGIES INC. |
发明人 |
WEBSTER, ERIC A. G. AG |
分类号 |
H01L;H04N |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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