发明名称 |
BACK SIDE ILLUMINATED SINGLE PHOTON AVALANCHE DIODE AND IMAGING SENSOR SYSTEM COMPRISING THE SAME |
摘要 |
A single photon avalanche diode (SPAD) includes an n doped epitaxial layer disposed in a first semiconductor layer. A p doped epitaxial layer is above the n doped epitaxial layer on a back side of the first semiconductor layer. A multiplication junction is defined at an interface between the n doped epitaxial layer and the p doped epitaxial layer. A multiplication junction is reversed biased above a breakdown voltage such that a photon received through the back side of the first semiconductor layer triggers an avalanche multiplication process in the multiplication junction. A p− doped guard ring region is implanted in the n doped epitaxial layer surrounding the multiplication junction. |
申请公布号 |
HK1208285(A1) |
申请公布日期 |
2016.02.26 |
申请号 |
HK20150108849 |
申请日期 |
2015.09.10 |
申请人 |
OMNIVISION TECHNOLOGIES INC. |
发明人 |
WEBSTER, ERIC A. G. AG |
分类号 |
H01L |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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