FILM FORMATION APPARATUS AND FILM FORMATION METHOD

摘要

There have been cases where transistors using oxide semiconductors are inferior in reliability to transistors using amorphous silicon. There have also been cases where transistors using oxide semiconductors show great variation in electrical characteristics within one substrate, from substrate to substrate, or from lot to lot. Therefore, an object is to manufacture a semiconductor device using an oxide semiconductor which has high reliability and less variation in electrical characteristics. Provided is a film formation apparatus including a load lock chamber, a transfer chamber connected to the load lock chamber through a gate valve, a substrate heating chamber connected to the transfer chamber through a gate valve, and a film formation chamber having a leakage rate less than or equal to 1×10−10 Pa·m3/sec, which is connected to the transfer chamber through a gate valve.

主权项

1. A film formation method comprising the steps of:
introducing a substrate into a film formation chamber having a leakage rate less than or equal to 1×10−10 Pa·m3/sec and being evacuated to a vacuum level; introducing a film formation gas having a purity greater than or equal to 99.999999% into the film formation chamber after the substrate is introduced into the film formation chamber; and sputtering a target using the film formation gas to form a film over the substrate.