发明名称 |
INTEGRATED PHASE CHANGE SWITCH |
摘要 |
Various methods and devices that involve phase change material (PCM) switches are disclosed. An exemplary integrated circuit comprises an active layer with a plurality of field effect transistor (FET) channels for a plurality of FETs. The integrated circuit also comprises an interconnect layer comprising a plurality of conductive interconnects. The plurality of conductive interconnects couple the plurality of field effect transistors. The integrated circuit also comprises an insulator layer covering at least a portion of the interconnect layer. The integrated circuit also comprises a channel of a radio-frequency (RF) PCM switch. The channel of the RF PCM switch is formed on the insulator layer. |
申请公布号 |
US2016056373(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201414468074 |
申请日期 |
2014.08.25 |
申请人 |
QUALCOMM SWITCH CORP. |
发明人 |
Goktepeli Sinan;Stuber Michael A. |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. An integrated circuit comprising:
an active layer comprising a plurality of field effect transistor channels for a plurality of field effect transistors; an interconnect layer comprising a plurality of conductive interconnects, wherein the plurality of conductive interconnects couple the plurality of field effect transistors; an insulator layer covering at least a portion of the interconnect layer; and a channel of a radio-frequency phase change material switch, wherein the channel of the radio-frequency phase change material switch is formed on the insulator layer. |
地址 |
San Diego CA US |