| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A p-type anode layer (2) is provided on an upper surface of an n-type drift layer (1). An n-type cathode layer (3) is provided on a lower surface of the n−-type drift layer (1). An n-type buffer layer (4) is provided between the n−-type drift layer (1) and the n-type cathode layer (3). A peak impurity concentration in the n-type buffer layer (4) is higher than that in the n−-type drift layer (1) and lower than that in the n-type cathode layer (3). A gradient of carrier concentration at a connection between the n−-type drift layer (1) and the n-type buffer layer (4) is 20 to 2000 cm−4. |
| 申请公布号 |
US2016056306(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201314784170 |
申请日期 |
2013.06.12 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
MASUOKA Fumihito;NAKAMURA Katsumi;NISHII Akito |
| 分类号 |
H01L29/872;H01L29/739;H01L29/417;H01L29/06;H01L29/36 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an n-type drift layer; a p-type anode layer provided on an upper surface of the n-type drift layer; a cathode layer provided on a lower surface of the n-type drift layer; and an n-type buffer layer provided between the n-type drift layer and the cathode layer, wherein a peak impurity concentration in the n-type buffer layer is higher than that in the n-type drift layer and lower than that in the cathode layer, and a gradient of carrier concentration at a connection between the n-type drift layer and the n-type buffer layer is 20 to 2000 cm−4. |
| 地址 |
Tokyo JP |
