| 发明名称 |
NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY |
| 摘要 |
A fin over an insulating layer on a substrate having a first crystal orientation is modified to form a surface aligned along a second crystal orientation. A device layer is deposited over the surface of the fin aligned along the second crystal orientation. |
| 申请公布号 |
US2016056244(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201314779257 |
申请日期 |
2013.06.28 |
| 申请人 |
INTEL CORPORATION |
发明人 |
DASGUPTA Sansaptak;THEN Han Wui;GARDNER Sanaz K.;CHU-KUNG Benjamin;RADOSAVLJEVIC Marko;SUNG Seung Hoon;CHAU Robert S. |
| 分类号 |
H01L29/205;H01L29/04;H01L21/324;H01L29/06;H01L21/02;H01L21/308 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to manufacture an electronic device, comprising:
modifying a fin over an insulating layer on a substrate aligned along a first crystal orientation to form a surface aligned along a second crystal orientation; and depositing a device layer over the surface of the fin aligned along the second crystal orientation. |
| 地址 |
Santa Clara, CA US |
