METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A recess is formed by partially etching a silicon carbide substrate. A mask layer is formed on the silicon carbide substrate by means of photolithography using the recess as an alignment mark. An impurity is implanted into the silicon carbide substrate using the mask layer. The silicon carbide substrate is annealed. After the annealing, a first electrode layer is deposited on the silicon carbide substrate. The first electrode layer is patterned by means of photolithography using the recess in the silicon carbide substrate as an alignment mark.

主权项

1. A method of manufacturing a silicon carbide semiconductor device, comprising the steps of:
forming a recess in a silicon carbide substrate by partially etching said silicon carbide substrate; forming a mask layer having a pattern on said silicon carbide substrate by means of photolithography using said recess in said silicon carbide substrate as an alignment mark; implanting an impurity into said silicon carbide substrate using said mask layer; annealing said silicon carbide substrate in order to activate said impurity; after said step of annealing said silicon carbide substrate, depositing a first electrode layer on said silicon carbide substrate; and patterning said first electrode layer by means of photolithography using said recess in said silicon carbide substrate as an alignment mark.