WELL RESISTORS AND POLYSILICON RESISTORS

摘要

An integrated circuit containing a well resistor has STI field oxide and resistor dummy active areas in the well resistor. STI trenches are etched and filled with trench fill dielectric material. The trench fill dielectric material is removed from over the active areas by a CMP process, leaving STI field oxide in the STI trenches. Subsequently, dopants are implanted into a substrate in the well resistor area to form the well resistor. An integrated circuit containing a polysilicon resistor has STI field oxide and resistor dummy active areas in an area for the polysilicon resistor. A layer of polysilicon is formed and planarized by a CMP process. A polysilicon etch mask is formed over the CMP-planarized polysilicon layer to define the polysilicon resistor. A polysilicon etch process removes polysilicon in areas exposed by the polysilicon etch mask, leaving the polysilicon resistor.

主权项

1. An integrated circuit, comprising:
a substrate comprising semiconductor material at a top surface of the substrate; field oxide formed by a shallow trench isolation (STI) process disposed at the top surface of the substrate; a well resistor disposed in the semiconductor material under the field oxide; resistor head active areas disposed through the field oxide proximate to ends of the well resistor; and resistor dummy active areas disposed through the field oxide in an area for the well resistor, the resistor dummy active areas being free of electrical connections above the substrate, the resistor dummy active areas having a density of 10 percent to 80 percent.