| 发明名称 |
ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT |
| 摘要 |
There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including following specific acid compound;Specific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acid |
| 申请公布号 |
US2016053386(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514928824 |
申请日期 |
2015.10.30 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
MIZUTANI Atsushi;KAMIMURA Tetsuya;TAKAHASHI Satomi;KOYAMA Akiko |
| 分类号 |
C23F1/30;H01L21/465 |
主分类号 |
C23F1/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and comprising following specific acid compound.
Specific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acid |
| 地址 |
Tokyo JP |
