发明名称 PLATING METHOD, PLATING APPARATUS, AND STORAGE MEDIUM
摘要 A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly.
申请公布号 US2016053378(A1) 申请公布日期 2016.02.25
申请号 US201514829740 申请日期 2015.08.19
申请人 Tokyo Electron Limited 发明人 Inatomi Yuichiro;Tanaka Takashi
分类号 C23C18/16;H01L21/288 主分类号 C23C18/16
代理机构 代理人
主权项 1. A plating method of performing an electroless plating process to a substrate having a recess, comprising: a preparing process of preparing the substrate in which the recess is formed; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on the substrate, wherein the plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer on a surface of the substrate; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process, a concentration of an additive contained in the first plating liquid is different from a concentration of the additive contained in the second plating liquid, and the first plating process includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate by rotating the substrate at a first speed and supplying the first plating liquid; and a process of promoting growth of the first plating layer by repeatedly rotating the substrate at a second speed higher than the first speed and at a third speed lower than the first speed and supplying the first plating liquid.
地址 Tokyo JP