发明名称 |
PLATING METHOD, PLATING APPARATUS, AND STORAGE MEDIUM |
摘要 |
A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly. |
申请公布号 |
US2016053378(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201514829740 |
申请日期 |
2015.08.19 |
申请人 |
Tokyo Electron Limited |
发明人 |
Inatomi Yuichiro;Tanaka Takashi |
分类号 |
C23C18/16;H01L21/288 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
1. A plating method of performing an electroless plating process to a substrate having a recess, comprising:
a preparing process of preparing the substrate in which the recess is formed; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on the substrate, wherein the plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer on a surface of the substrate; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process, a concentration of an additive contained in the first plating liquid is different from a concentration of the additive contained in the second plating liquid, and the first plating process includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate by rotating the substrate at a first speed and supplying the first plating liquid; and a process of promoting growth of the first plating layer by repeatedly rotating the substrate at a second speed higher than the first speed and at a third speed lower than the first speed and supplying the first plating liquid. |
地址 |
Tokyo JP |