LDMOS DEVICE AND MANUFACTURING METHOD THEREOF

摘要

An LDMOS device (30) and manufacturing method thereof; the LDMOS device (30) comprises: a semiconductor substrate (300); a body region (301) and a drift region (302) formed on the surface of the semiconductor substrate (300) with an interval therebetween and respectively having a first conduction type and a second conduction type; a field oxidation layer (304) formed on the drift region (302) and having a thickness range of 1000-3000 angstroms; a source region (306) and a drain region (307) located at two sides of the field oxidation layer (304) and respectively formed in the body region (301) and the drift region (302); a body region extraction region (308) formed in the body region (301) and separated by an interval from the source region (306); and a gate electrode (305) formed on the semiconductor substrate (300) between the body region (301) and the drift region (302) and partially covering the body region (301) and the field oxidation layer (304).