发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE |
摘要 |
A thin film transistor (TFT) and manufacturing method thereof, array substrate and manufacturing method thereof and display device; the TFT comprises a gate electrode (7), a source electrode (9), a drain electrode (10), an active layer (4) and a gate insulating layer (6); the gate insulating layer (6) is disposed above the active layer (4); the gate electrode (7), the source electrode (9), and the drain electrode (10) in the same layer are disposed above the gate insulating layer (6); the active layer (4) is connected to the source electrode (9) via a first connecting electrode (12b); the active layer (4) is connected to the drain electrode (10) via a second connecting electrode (12c). The TFT can be formed by a three-step patterning process, reducing process time, improving yield, and lowering costs. |
申请公布号 |
WO2016026246(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
WO2014CN94114 |
申请日期 |
2014.12.17 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
LONG, CHUNPING;LIANG, YINAN |
分类号 |
H01L29/786;H01L21/336;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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