发明名称 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
摘要 A thin film transistor (TFT) and manufacturing method thereof, array substrate and manufacturing method thereof and display device; the TFT comprises a gate electrode (7), a source electrode (9), a drain electrode (10), an active layer (4) and a gate insulating layer (6); the gate insulating layer (6) is disposed above the active layer (4); the gate electrode (7), the source electrode (9), and the drain electrode (10) in the same layer are disposed above the gate insulating layer (6); the active layer (4) is connected to the source electrode (9) via a first connecting electrode (12b); the active layer (4) is connected to the drain electrode (10) via a second connecting electrode (12c). The TFT can be formed by a three-step patterning process, reducing process time, improving yield, and lowering costs.
申请公布号 WO2016026246(A1) 申请公布日期 2016.02.25
申请号 WO2014CN94114 申请日期 2014.12.17
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 LONG, CHUNPING;LIANG, YINAN
分类号 H01L29/786;H01L21/336;H01L27/12 主分类号 H01L29/786
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