HIGH GAIN DEVICE

摘要

A method of forming a device is disclosed. A substrate having a high gain (HG) device region for a HG transistor is provided. A HG gate is formed on the substrate in the HG device region. The HG gate includes sidewall spacers on its sidewalls. Heavily doped regions are formed adjacent to the HG gate. Inner edges of the heavily doped regions are aligned with about outer edges of the sidewall spacers of the HG gate. The heavily doped regions serve as HG source/drain (S/D) regions of the HG gate. The HG S/D regions do not include lightly doped drain (LDD) regions or halo regions.

主权项

1. A device comprising:
a substrate having a core device region for a core transistor and a high gain (HG) device region for a HG transistor; a core gate disposed on the substrate in the core device region and a HG gate disposed on the substrate in the HG device region, wherein
the core gate and HG gate include gate dielectric and gate electrode layers, andthe gate dielectric layers of the core gate and gate comprise the same thickness; first polarity type lightly doped drain (LDD) regions disposed adjacent to the core gate, wherein the first polarity type comprises n-type; and heavily doped first polarity type core source/drain (S/D) regions disposed adjacent to the core gate and heavily doped first polarity type HG S/D regions disposed adjacent to the HG gate, wherein the core device region includes core S/D regions with LDD regions while the HG device region includes HG S/D regions without LDD regions.