METHOD OF FORMING FIN FIELD EFFECT TRANSISTOR

摘要

A method of making a Fin field effect transistor (FinFET) includes forming a fin having a first height above a first surface of a substrate, wherein a portion of the fin has first tapered sidewalls, and the fin has a top surface. The method includes forming an insulation region over a portion of the first surface of the substrate, wherein a top of portion of the insulation region defines a second surface. The method further includes covering the first tapered sidewalls and the top surface with a gate dielectric. The method further includes forming a conductive gate strip traversing over the gate dielectric, wherein the conductive gate strip has second tapered sidewalls along a longitudinal direction perpendicular to the first height, and a space between the second tapered sidewalls in the longitudinal direction is greater at a location nearest to the substrate than at a location farthest from the substrate.

主权项

1. A method of making a Fin field effect transistor (FinFET) comprising:
forming a fin having a first height above a first surface of a substrate, wherein a portion of the fin has first tapered sidewalls, and the fin has a top surface; forming an insulation region over a portion of the first surface of the substrate, wherein a top of portion of the insulation region defines a second surface; covering the first tapered sidewalls and the top surface with a gate dielectric; and forming a conductive gate strip traversing over the gate dielectric, wherein the conductive gate strip has second tapered sidewalls along a longitudinal direction perpendicular to the first height, and a space between the second tapered sidewalls in the longitudinal direction is greater at a location nearest to the substrate than at a location farthest from the substrate.