Isolation for Semiconductor Devices

摘要

A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an opening through one or more layers over a substrate, the opening comprising sidewalls; depositing a first dielectric layer along the sidewalls of the opening; and implanting first ions into the substrate using the first dielectric layer as a mask, the implanting the first ions forming an isolation region within the substrate.