COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS

摘要

A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type and having first and second surfaces, a first device isolation layer extending from the first surface to the second surface to define first and second pixel regions, a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions, and a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define first and second active portions spaced apart from each other in each of the first and second pixel regions.

主权项

1. A complementary metal-oxide-semiconductor (CMOS) image sensor, comprising
an epitaxial layer having a first conductivity type and having a first surface and a second surface facing each other; a first device isolation layer extending from the first surface to the second surface of the epitaxial layer to define a first pixel region and a second pixel region; a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions; a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define a first active portion and a second active portion which are spaced apart from each other in each of the first and second pixel regions; first and second transfer gates disposed on the first active portions of the first and second pixel regions, respectively; first and second floating diffusion regions formed in the first active portions and beside the first and second transfer gates, respectively; and a connection line crossing over the first and second pixel regions and being connected to both the first and second floating diffusion regions.