发明名称 METHOD FOR VOID-FREE COBALT GAP FILL
摘要 Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors.
申请公布号 US2016056074(A1) 申请公布日期 2016.02.25
申请号 US201414465610 申请日期 2014.08.21
申请人 Lam Research Corporation 发明人 Na Jeong-Seok;Yu Tianhua;Danek Michal;Gopinath Sanjay
分类号 H01L21/768;H01L21/3205;H01J37/32;C23C16/50;C23C16/455;H01L21/326;C23C16/52 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method comprising: (a) providing a substrate having one or more features, each feature comprising a feature opening; (b) selectively inhibiting cobalt nucleation on surfaces of the one or more features that are at or near the feature openings such that there is a differential inhibition profile in each feature; and (c) depositing cobalt in the one or more features in accordance with the differential inhibition profile.
地址 Fremont CA US