| 发明名称 |
METHODS OF FORMING A GATE CAP LAYER ABOVE A REPLACEMENT GATE STRUCTURE |
| 摘要 |
A method includes performing a first chemical mechanical polishing process to define a polished replacement gate structure having a dished upper surface, wherein the polished dished upper surface of the polished replacement gate structure has a substantially curved concave configuration. A gate cap layer is formed above the polished replacement gate structure, wherein a bottom surface of the gate cap layer corresponds to the polished dished upper surface of the polished replacement gate structure. |
| 申请公布号 |
US2016056263(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514928681 |
申请日期 |
2015.10.30 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Grasshoff Gunter;Labelle Catherine |
| 分类号 |
H01L29/66;H01L21/321;H01L21/311;H01L21/3105 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
performing a first chemical mechanical polishing process to define a polished replacement gate structure having a dished upper surface, said polished dished upper surface of said polished replacement gate structure having a substantially curved concave configuration; and forming a gate cap layer above said polished replacement gate structure, wherein a bottom surface of said gate cap layer corresponds to said polished dished upper surface of said polished replacement gate structure. |
| 地址 |
Grand Cayman KY |
