WAFER LEVEL PACKAGE (WLP) INTEGRATED DEVICE COMPRISING ELECTROMAGNETIC (EM) PASSIVE DEVICE IN REDISTRIBUTION PORTION, AND RADIO FREQUENCY (RF) SHIELD

摘要

Some novel features pertain to an integrated device that includes a substrate, several lower level metal layers, several lower level dielectric layers, and a redistribution portion. The redistribution portion includes a first dielectric layer that includes a first dielectric thickness, and an electromagnetic (EM) passive device that includes a first redistribution interconnect. The first redistribution interconnect includes a first redistribution thickness, where the first dielectric thickness is at least about 2 times greater than the first redistribution thickness. In some implementations, the redistribution portion includes a radio frequency (RF) shield. In some implementations, the RF shield is located between a passivation layer and the several lower level dielectric layers. The RF shield is located between the EM passive device and the several lower level dielectric layers. The RF shield is electrically coupled to an interconnect configured to provide an electrical path for a ground signal.

主权项

1. An integrated device comprising:
a substrate; a plurality of lower level metal layers; a plurality of lower level dielectric layers; and a redistribution portion comprising:
a first dielectric layer comprising a first dielectric thickness; andan electromagnetic (EM) passive device comprising a first redistribution interconnect, wherein the first redistribution interconnect comprises a first redistribution thickness, the first dielectric thickness being at least about 2 times (2×) greater than the first redistribution thickness.