SEMICONDUCTOR DEVICE HAVING PASSING GATE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device that has a passing gate with a single gate electrode and a main gate with lower and upper gate electrodes mitigates gate induced drain leakage (GIDL). Additional elements that help mitigate GIDL include the upper gate electrode having a lower work function than the lower gate electrode, and the lower gate electrode being disposed below a storage node junction region while the upper gate electrode is disposed at a same level as the storage node junction region.

主权项

1. A semiconductor device comprising:
a device isolation film defining an active region; a main gate having first and second gate electrodes buried in the active region; and a passing gate having a single gate electrode buried in the device isolation film.