THIN FILM AND METHOD FOR MANUFACTURING THIN FILM

摘要

The present invention provides a kind of thin film and a fabrication method of thin films. The method comprises implanting ions under the surface of the original substrate by ion-implanting method, hence creating a thin film layer, a splitting layer and a remaining material layer on the original substrate; wherein, the thin film layer is on the surface of the original substrate and the splitting layer is between the thin film layer and the remaining material layer; the implanted ions are distributed in the splitting layer. Make the target substrate be in contact with the thin film layer of the original substrate, and then bond the original substrate to the target substrate by wafer-bonding method to form a bonding unit. Place the bonding unit into a prepared container to heat the bonding unit, so that the thin film layer is split off from the remaining material layer. After the splitting of the thin film layer and the remaining material layer, continue to heat the thin film layer and the target substrate in the prepared container for scheduled time under the condition of high pressure atmosphere. The present invention can greatly reduce the defect density of thin films, and the thin films fabricated thereby are with a large size, an equal area to that of the wafer, nanoscale thickness and good uniformity of film thickness.

主权项

1. A fabrication method of thin films, the method comprises:
implanting ions into the original substrate by ion-implantation method, the implanted ions go through a surface of the original substrate and are mainly distributed in the splitting layer of the original substrate, which makes the formation of a thin film layer, a splitting layer and a remaining material layer in the original substrate, wherein, the thin film layer is a part of the original substrate from said surface of the original substrate to the splitting layer, the remaining material layer is a part of the original substrate except for the thin film layer and the splitting layer; making the target substrate be in contact with the thin film layer of the original substrate, and then bonding the original substrate and the target substrate together by wafer-bonding method to form a bonding unit; placing the bonding unit into a predetermined container to heat the bonding unit, making the thin film layer split from the remaining material layer; after the splitting of the thin film layer from the remaining material layer, continuing to heat the thin film layer and the target substrate for scheduled time in the predetermined container under the atmospheric condition of the atmospheric pressure being higher than about 5 bar.