发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING POWER TSVS
摘要 A semiconductor device including power TSVs for stably supplying a power source is described. A semiconductor device includes a chip power pad placed in a first region of a chip, power through silicon vias (TSVs) connected to the chip power pad and placed in the second region of each of the chips, and metal lines configured to couple the chip power pad and the power TSVs.
申请公布号 US2016056130(A1) 申请公布日期 2016.02.25
申请号 US201514928586 申请日期 2015.10.30
申请人 SK hynix Inc. 发明人 YOON Young Hee;Lee Ga Young
分类号 H01L25/065;H01L49/02;H01L23/00;H01L23/48;H01L23/528 主分类号 H01L25/065
代理机构 代理人
主权项 1. A semiconductor integrated circuit, comprising: a plurality of chips which are stacked, wherein each chip includes; an active region including a plurality of reservoir capacitor regions and a plurality of dummy regions; and a plurality of dummy lines disposed on each dummy region; a plurality of power through silicon vias (TSVs) formed in the to active region, wherein each power TSV is positioned between the dummy region and the reservoir capacitor region; wherein a pair of the power TSVs which received a same voltage are electrically coupled using selected dummy lines and power lines electrically coupled with the selected dummy lines.
地址 Icheon-si KR