发明名称 METHOD AND APPARATUS ANALYZING A TARGET MATERIAL
摘要 Aspects of the subject disclosure may include, for example, an apparatus including a material having one or more atomic layers with two or less degrees of freedom for motion of charges in the material, and a gate coupled to the material for controlling charge concentration of the material. The material can have constricted sides, a first through-hole, and a first port and a second port for conduction of charges in the material. The gate can have a second through-hole that is at least partially aligned with the first through-hole. A first voltage potential can be applied to the first port and the second port, along with a second voltage potential applied to the gate which adjusts the charge concentration of the material. A sensor can be used to measure a change in electrical properties of the material caused by a target material traversing the first through-hole of the material. Additional embodiments are disclosed.
申请公布号 US2016054260(A1) 申请公布日期 2016.02.25
申请号 US201314781106 申请日期 2013.10.04
申请人 LEBURTON Jean-Pierre;THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS 发明人 LEBURTON JEAN-PIERRE
分类号 G01N27/447;G01N27/453 主分类号 G01N27/447
代理机构 代理人
主权项 1. A method, comprising: providing a material having one or more atomic layers with two or less degrees of freedom of motion of charges in the material; constricting the material to generate a constriction in the material to configure electrical properties in the material; coupling a first end of the material to a first electrode; coupling a second end of the material to a second electrode; coupling a gate to the material; providing a first through-hole in the material near a vicinity of the constriction; providing a second through-hole in the gate, wherein the first through-hole and the second through-hole are substantially coaxially aligned; introducing a target material at one of the first through-hole or the second through-hole to analyze the target material; applying a first voltage potential to the first electrode and the second electrode to the material; applying a second voltage potential to the gate to adjust a charge concentration of the material; and measuring a change in electrical properties of the material responsive to the target material traversing the first through-hole of the material.
地址 Urbana IL US