发明名称 FILM-FORMING AND ANALYSIS COMPOSITE APPARATUS, METHOD FOR CONTROLLING FILM-FORMING AND ANALYSIS COMPOSITE APPARATUS, AND VACUUM CHAMBER
摘要 A vacuum chamber is provided with a film-forming apparatus which film-forms an oxide semiconductor thin film by sputtering, an analysis apparatus which performs spectroscopic analysis with respect to a surface of the film-formed oxide semiconductor thin film, and a valve which splits an inner space of the vacuum chamber into a first space where the analysis apparatus is arranged and a second space where the film-forming apparatus is arranged and permits communication between the split first space and second space.
申请公布号 US2016054244(A1) 申请公布日期 2016.02.25
申请号 US201514816169 申请日期 2015.08.03
申请人 Sharp Kabushiki Kaisha 发明人 NIINOH Atsushi
分类号 G01N23/227 主分类号 G01N23/227
代理机构 代理人
主权项 1. A film-forming and analysis composite apparatus having a function as a vacuum chamber which can make an inner space thereof a vacuum, the apparatus comprising: a film-forming apparatus which film-forms a sample by sputtering; an analysis apparatus which performs spectroscopic analysis with respect to a surface of the sample which is film-formed; and an interrupting member which splits the inner space into a first space where the analysis apparatus is arranged and a second space where the film-forming apparatus is arranged and permits communication between the split first space and second space.
地址 Osaka JP