METHOD OF ACQUIRING EBSP PATTERNS

摘要

The invention relates to a method of acquiring an Energy Backscattering Pattern image of a sample in a charged particle apparatus, the sample showing a flat surface, the charged particle apparatus equipped with an electron column for producing a finely focused electron beam, a position sensitive detector for detecting EBSP patterns, and a sample holder for holding and positioning the sample, the method comprising the steps of:
Positioning the sample with respect to the electron beam,Directing the electron beam to an impact point on the sample, thereby causing backscattered electrons to irradiate the detector, andAcquiring the signal from the detector while the beam is kept stationary,

in which
The detector is equipped to selectively detect electrons with an energy above a predefined threshold, andThe signal of the electrons with an energy above said threshold is used to form an EBSP image.

主权项

1. Method of acquiring an Electron Backscattering Pattern (EBSP) image and/or a Kossel image of a sample in a charged particle apparatus, the sample showing a flat surface, the charged particle apparatus equipped with an electron column for producing a finely focused electron beam, a position sensitive detector for detecting EBSP patterns and/or Kossel image, and a sample holder for holding and positioning the sample, the method comprising the steps of:
positioning the sample with respect to the electron beam, directing the electron beam to an impact point on the sample, thereby causing backscattered electrons and/or X-rays to irradiate the detector, and acquiring the signal from the detector while the beam is kept stationary, the detector is equipped to selectively detect electrons and/or X-rays with an energy above a predefined threshold, and the signal of the electrons and/or X-rays with an energy above said threshold is used to form an EBSP or Kossel image.in which
during acquisition of the image the angle between the normal to the flat surface of the sample and the electron beam is less than 45 degrees.