SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

This silicon carbide semiconductor device is provided with a silicon carbide semiconductor layer (100) and an electrode layer (101) that establishes an ohmic contact with the silicon carbide semiconductor layer (100). With respect to the electrode layer (101), the value of CI/CA, which is obtained by dividing the atomic concentration of carbon CI in the interface (IF) between the silicon carbide semiconductor layer (100) and the electrode layer (101) by the average atomic concentration of carbon CA within the electrode layer (101), satisfies 1.0 ≤ CI/CA ≤ 3.0.