| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device that is enhanced in integration degree.SOLUTION: A non-volatile semiconductor device 110 has a first integration structure ML1, a first semiconductor layer SP1, a first organic film 48p1, a first semiconductor side insulation film 42p1, and a first electrode side insulation film 43p1. The first integration structure has plural electrode films 61a laminated along a first direction Z, and a first inter-electrode insulation film 62a provided between the plural first electrode films. The first semiconductor layer faces the side surfaces of the plural first electrode films. The first organic film contains an organic compound provided between the side surfaces of the plural first electrode films and the first semiconductor layer. The first semiconductor side insulation film is provided between the first organic film and the first semiconductor layer. The first electrode side insulation film is provided between the first organic film and the side surfaces of the plural first electrode films. The first organic film is joined to the first semiconductor side insulation film.SELECTED DRAWING: Figure 1 |
