METHOD FOR PRODUCING GRAPHENE NANORIBBON ON h-BN

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a graphene nanoribbon on a h-BN (hexagonal-Boron Nitride), in which the method solves such a longtime subject that it is difficult to nucleate and grow graphene on an insulating material substrate and avoids a series of problems brought by complicated steps such as a process of transferring graphene and a process of cutting graphene nanoribbon.SOLUTION: The present invention provides a method for producing a graphene nanoribbon 12 on a h-BN 10 including the steps of: 1) forming a h-BN groove pattern with a nanoribbon-like groove structure on the h-BN by a metal catalyst etching method; and 2) growing a graphene nanoribbon in the h-BN groove pattern by a chemical vapor deposition method. In the step 2), a graphene nanoribbon whose shape can be controlled is produced on the h-BN directly. The method for producing a graphene nanoribbon improves quality of the graphene and achieves high carrier mobility. An adjustment of an electrical structure of the graphene is achieved by controlling the shape of graphene such as a width, and an edge structure.SELECTED DRAWING: Figure 3