SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type separated from the first semiconductor layer in a first direction, a light emitting layer provided between the first and second semiconductor layers, and a first intermediate unit provided between the first semiconductor layer and the light emitting layer. The light emitting layer includes a well layer including a nitride semiconductor including In. The first intermediate unit includes stacked bodies. The stacked bodies are arranged in the first direction. Each of the stacked bodies includes a first layer of Inx1Ga1-x1N, a second layer of Aly1Ga1-y1N provided between the first layer and the light emitting layer to contact the first layer, and a third layer of Aly2Ga1-y2N provided between the second layer and the light emitting layer to contact the second layer.

主权项

1. A semiconductor light emitting element, comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type separated from the first semiconductor layer in a first direction; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the light emitting layer including a well layer including a nitride semiconductor including In; and a first intermediate unit provided between the first semiconductor layer and the light emitting layer, the first intermediate unit including a plurality of stacked bodies, the stacked bodies being arranged in the first direction, each of the stacked bodies including:
a first layer of Inx1Ga1-x1N (0