INTEGRATED CIRCUIT DEVICE INCLUDING POLYCRYSTALLINE SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING THE SAME

摘要

An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

主权项

1. An integrated circuit (IC) device comprising:
a peripheral circuit formed on a substrate; a polycrystalline silicon thin film formed on the peripheral circuit; and a memory cell array comprising a plurality of memory cell strings disposed on the polycrystalline silicon thin film to vertically overlap the peripheral circuit, wherein the polycrystalline silicon thin film is vertically between the peripheral circuit and the memory cell array and comprises a plurality of silicon single crystals, and at least a first silicon single crystal selected from the plurality of silicon single crystals comprises a flat horizontal portion, which provides an active region of the plurality of memory cell strings, and a vertically protruding portion protruding from the flat portion toward the peripheral circuit.