SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING METHOD

摘要

With the miniaturization of semiconductors and the increase in the diameter of wafers, the wafer size increases. Therefore, a supply gas flow rate also increases as compared with a process of a conventional wafer size. Thus, it is difficult to perform an exhaust pressure control in the same manner as a conventional processing process. ON/OFF valves provided in a plurality of exhaust pipes communicating with a processing chamber and a vacuum pump, and a controller configured to control the ON/OFF valves are provided, and it is possible to cope with the increase in the diameter of the wafer by performing a valve on/off and pressure control operation in a process event.

主权项

1. A substrate processing apparatus comprising:
a reaction tube configured to process a plurality of substrates carried in a substrate holder; a gas supply unit configured to supply a processing gas into the reaction tube; an exhaust unit connected to the reaction tube and branching into at least two exhaust pipes at a downstream side of a connection portion with the reaction tube, the exhaust unit including a valve configured to control the amount of the exhaust in exhaust pipes, and merged into one exhaust pipe downstream of valves provided in the exhaust pipes; and a control unit configured to fully open all the valves provided in the exhaust unit at a timing to substantially evacuate the reaction tube.