发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF PROCESSING SUBSTRATE |
摘要 |
A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas. |
申请公布号 |
US2016053373(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201514826756 |
申请日期 |
2015.08.14 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
INADA Tetsuaki;WADA Yuichi;ISHISAKA Mitsunori;HIRANO Mitsuhiro;HORII Sadayoshi;ITATANI Hideharu;TAKANO Satoshi;TAKEBAYASHI Motonari |
分类号 |
C23C16/455;C23C16/458;C23C16/34;H01L21/02 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus, comprising:
a processing chamber having a first processing region and a second processing region; a substrate mounting table on which a substrate to be processed is mounted, the substrate mounting table being rotatably installed in the processing chamber; and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, wherein at least one of the first processing region and the second processing region includes: a gas supply part that includes a line-shaped opening portion extending in a radial direction of the substrate mounting table and is configured to supply a gas from the opening portion into the at least one region; and a gap holding member that protrudes from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the surface of the substrate has a gap of a predetermined distance, the space serving as a passage of the gas supplied by the gas supply part. |
地址 |
Tokyo JP |