发明名称 |
SEMICONDUCTOR SWITCHING DEVICE INCLUDING CHARGE STORAGE STRUCTURE |
摘要 |
A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode. |
申请公布号 |
US2016056251(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201514814758 |
申请日期 |
2015.07.31 |
申请人 |
Infineon Technologies AG |
发明人 |
Laven Johannes Georg;Mauder Anton;Dainese Matteo;Hirler Franz;Jaeger Christian;Roesch Maximillian;Roesner Wolfgang;Stiftinger Martin;Strenz Robert |
分类号 |
H01L29/423;H01L29/792;H01L27/02;H01L27/115;H01L27/06 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first load terminal electrically connected to source zones of transistor cells, wherein the source zones form first pn junctions with body zones; a second load terminal electrically connected to a drain construction forming second pn junctions with the body zones; and control structures directly adjoining the body zones, the control structures comprising a control electrode and charge storage structures, the control electrode configured to control a load current through the body zones, the charge storage structures insulating the control electrode from the body zones and containing a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load terminal. |
地址 |
Neubiberg DE |