| 摘要 |
Provided is a photodiode comprising a graphene-silicon quantum dot hybrid structure, the photodiode having enhanced optical properties and electrical properties by controlling the size of a silicon quantum dot and the doping concentration of graphene. A photodiode, comprising a graphene-silicon quantum dot hybrid structure, enables easy manufacture, large-area manufacturing, and selective controlling of an absorbed energy, and has wide light detection band from ultraviolet region to near-infrared region. |
