SEMICONDUCTOR LASER DIODE WITH SHORTENED CAVITY LENGTH

摘要

A semiconductor laser diode (LD) with a shortened cavity length is disclosed. The LD provides a rectangular substrate and, on the substrate, a cavity structure including a mesa with facets forming the laser cavity. The facets of the mesa are stood back from the side of the substrate. Pads to provide electrical signals are arranged in both sides of the mesa close to the sides of the substrate.

主权项

1. A semiconductor laser diode (LD) providing an optical axis along which laser light is emitted, comprising:
a rectangular semiconductor substrate; and a mesa including an active layer to generate the laser light, the mesa extending along the optical axis and having two facets in respective ends thereof to define a cavity for the laser light, wherein the facets of the mesa are stood back from respective edges of the substrate each perpendicular to the optical axis.