| 发明名称 |
CIRCUIT ELEMENT INCLUDING A LAYER OF A STRESS-CREATING MATERIAL PROVIDING A VARIABLE STRESS |
| 摘要 |
An integrated circuit includes a first transistor having a first source region, a first drain region, a first channel region, a first gate electrode, and a first layer of a first stress-creating material, the first stress-creating material providing a stress that is variable in response to a signal acting on the first stress-creating material, wherein the first layer of the first stress-creating material is arranged to provide a first variable stress in the first channel region of the first transistor, the first variable stress being variable in response to a first signal acting on the first stress-creating material. The integrated circuit also includes a second transistor having a second source region, a second drain region, a second channel region, and a second gate electrode. |
| 申请公布号 |
US2016056288(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514933557 |
申请日期 |
2015.11.05 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
von Kluge Johannes |
| 分类号 |
H01L29/78;G05F3/26;H03K19/20;H01L27/092 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
a first transistor comprising a first source region, a first drain region, a first channel region, a first gate electrode, and a first layer of a first stress-creating material, said first stress-creating material providing a stress that is variable in response to a signal acting on said first stress-creating material, wherein said first layer of said first stress-creating material is arranged to provide a first variable stress in said first channel region of said first transistor, said first variable stress being variable in response to a first signal acting on said first stress-creating material; and a second transistor comprising a second source region, a second drain region, a second channel region, and a second gate electrode. |
| 地址 |
Grand Cayman KY |
